 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI2304BDS New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.070 @ VGS = 10 V 0.105 @ VGS = 4.5 V ID (A) 3.2 2.6 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2304BDS (L4)* *Marking Code Ordering Information: SI2304BDS-T1--E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec 30 Steady State $20 Unit V 3.2 2.5 10 0.9 1.08 0.69 -55 to 150 2.6 2.1 0.62 0.75 0.48 W _C A THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72503 S-32412--Rev. B, 24-Nov-03 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 90 130 60 Maximum 115 166 75 Unit _C/W C/W 1 SI2304BDS Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS = 30 V, VGS = 1.0 V, TJ =25_C VDS w 4.5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 4.5 V, ID = 2.0 A VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V 6 0.055 0.080 6.0 0.8 1.2 0.070 0.105 30 1.5 Symbol Test Conditions Min Typ Max Unit 3.0 "100 0.5 10 1 V nA mA A W S V Dynamic Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgt Qgs Qgd Rg Ciss Coss Crss VDS = 15 V, VGS = 0 V, f = 1 MHz f = 1.0 MHz VDS = 15 V, VGS = 10 V, ID = 2.5 A , , VDS = 15 V, VGS = 5 V, ID = 2.5 A 2.6 4.6 0.8 1.15 3.0 225 50 28 pF W 4 7 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%. td(on) tr td(off) tf VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 7.5 12.5 19 15 12 20 30 25 ns TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 5 V 10 Transfer Characteristics 8 I D - Drain Current (A) 8 I D - Drain Current (A) 6 6 4 4V 2 3V 0 2 4 6 8 10 4 TC = 125_C 2 25_C -55_C 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 72503 S-32412--Rev. B, 24-Nov-03 0 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 SI2304BDS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.24 r DS(on) - On-Resistance ( W ) 0.20 C - Capacitance (pF) 0.16 0.12 VGS = 4.5 V 0.08 0.04 0.00 0 2 4 6 8 10 VGS = 10 V 350 300 250 200 150 100 Coss 50 0 0 5 10 15 20 25 30 Crss Ciss Vishay Siliconix Capacitance ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 2.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 1.2 4 1.0 2 0.8 0 0 1 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 TJ = 150_C 0.20 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 1 r DS(on) - On-Resistance ( W ) 0.16 ID = 2.5 A 0.12 0.1 TJ = 25_C 0.08 0.01 0.04 0.001 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72503 S-32412--Rev. B, 24-Nov-03 www.vishay.com 3 SI2304BDS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -50 2 Power (W) 6 TA = 25_C Single Pulse 10 Single Pulse Power 8 4 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 ms 100 ms 10 I D - Drain Current (A) 1 1 ms 10 ms 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72503 S-32412--Rev. B, 24-Nov-03 |
Price & Availability of SI2304BDS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |